TOSHIBA RN1962TE85LF

TOSHIBA · Transistors (BJTs) · MPN RN1962TE85LF

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Specifications

Collector - Emitter Voltage VCEO50V
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW

Technical details

50V 100mA 200mW TSSOP-6(SC-88)SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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