TOSHIBA · Transistors (BJTs) · MPN RN1905,LF(CT
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.0515 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V |
| Current - Collector(Ic) | 100mA |
80 200mW 100mA 50V 2 NPN (Pre-Biased) TSSOP-6(SC-88)SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS