TOSHIBA · Transistors (BJTs) · MPN RN1902,LF(CT
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| DC Current Gain | 50 |
| Emitter-Base Voltage VEBO | 10V |
| Vce Saturation(VCE(sat)) | 300mV |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 2.4V@5mA,0.2V |
| Collector - Emitter Voltage VCEO | 50V |
50 200mW 100mA 50V 1 NPN (Pre-Biased) SOT363 Bipolar Transistor Arrays, Pre-Biased RoHS