TOSHIBA RN1711JE(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN RN1711JE(TE85L,F)

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Specifications

DC Current Gain120
Number2 NPN (Pre-Biased)
Pd - Power Dissipation100mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

120 2 NPN (Pre-Biased) 100mW 100mA 50V SOT-553 Bipolar Transistor Arrays, Pre-Biased RoHS

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