TOSHIBA · Transistors (BJTs) · MPN RN1707JE(TE85L,F)
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| Emitter-Base Voltage VEBO | 6V |
|---|---|
| DC Current Gain | 80 |
| Input Resistor | 10kΩ |
| Resistor Ratio | 0.213 |
| Number | 2 NPN Pre-Biased (Emitter-Coupled) |
| Pd - Power Dissipation | 100mW |
| Voltage - Input(Max)(VI(off)) | 1V |
| Input Voltage (VI(on)@Ic,Vce) | 1.8V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased (Emitter-Coupled) 50V 100mA 100mW Surface Mount SOT-553