TOSHIBA · Transistors (BJTs) · MPN RN1706,LF
No reviews yet — be the first to review TOSHIBA RN1706,LF.
| Emitter-Base Voltage VEBO | 5V |
|---|---|
| DC Current Gain | 80 |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 0.1 |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 800mV |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
80 2 NPN (Pre-Biased) 200mW 100mA 50V TSSOP-5(SC-70-5)SOT-353 Bipolar Transistor Arrays, Pre-Biased RoHS