TOSHIBA · Transistors (BJTs) · MPN RN1703JE(TE85L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 300mV |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 100mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@5mA,200mV |
| Voltage - Input(Max)(VI(off)) | 1.5V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased (Emitter-Coupled) 50V 100mA 100mW Surface Mount SOT-553