TOSHIBA · Transistors (BJTs) · MPN RN1501(TE85L,F)
No reviews yet — be the first to review TOSHIBA RN1501(TE85L,F).
| Current - Collector Cutoff | - |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | 250MHz |
| DC Current Gain | 30 |
| Emitter-Base Voltage VEBO | - |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 100mV@5mA,250uA |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 300mW |
50V 30 100mA 300mW 2 NPN (Pre-Biased) NPN Single, Pre-Biased Bipolar Transistors RoHS