TOSHIBA · Transistors (BJTs) · MPN RN1427(TE85L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 90 |
| Emitter-Base Voltage VEBO | 6V |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 800mA |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.24 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@100mA,0.2V |
| Voltage - Input(Max)(VI(off)) | 1V@0.1mA,5V |
50V 90 800mA 200mW 1 NPN (Pre-Biased) NPN SOT-346 Single, Pre-Biased Bipolar Transistors RoHS