TOSHIBA RN1417,LF

TOSHIBA · Transistors (BJTs) · MPN RN1417,LF

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

50V 30 100mA 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

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