TOSHIBA · Transistors (BJTs) · MPN RN1410,LF
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 120 |
| Current - Collector(Ic) | 100mA |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
50V 120 100mA 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS