TOSHIBA RN1403,LF

TOSHIBA · Transistors (BJTs) · MPN RN1403,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation200mW
Input Resistor22kΩ
Resistor Ratio1
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))1.5V@0.1mA,5V
Input Voltage (VI(on)@Ic,Vce)3V@5mA,0.2V
Number1 NPN (Pre-Biased)

Technical details

50V 70 100mA 1 NPN (Pre-Biased) NPN TO-236-MOD Single Bipolar Transistors RoHS

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