TOSHIBA RN1402,LF

TOSHIBA · Transistors (BJTs) · MPN RN1402,LF

No reviews yet — be the first to review TOSHIBA RN1402,LF.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain50
Emitter-Base Voltage VEBO10V
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Number1 NPN
typeNPN
Pd - Power Dissipation200mW

Technical details

Bipolar (BJT) Transistor NPN Surface Mount SOT-346

Related Transistors (BJTs)