TOSHIBA RN1303(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN RN1303(TE85L,F)

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation100mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 100mW Surface Mount SOT-323

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