TOSHIBA RN1302,LF

TOSHIBA · Transistors (BJTs) · MPN RN1302,LF

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain50
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation100mW
Input Voltage (VI(on)@Ic,Vce)1.2V
Voltage - Input(Max)(VI(off))2.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 100mW Surface Mount SC-70

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