TOSHIBA · Transistors (BJTs) · MPN RN1116(TE85L,F)
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| Current - Collector(Ic) | 100mA |
| Input Resistor | 6.11kΩ |
| Resistor Ratio | 0.47 |
| Pd - Power Dissipation | 100mW |
50V 100mA 100mW SSM Single, Pre-Biased Bipolar Transistors RoHS