TOSHIBA · Transistors (BJTs) · MPN RN1115,LF(CT
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 50 |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 4.55 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 100mW |
| Voltage - Input(Max)(VI(off)) | 1V |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
50V 50 100mA 1 NPN (Pre-Biased) 100mW SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS