TOSHIBA RN1114,LF

TOSHIBA · Transistors (BJTs) · MPN RN1114,LF

No reviews yet — be the first to review TOSHIBA RN1114,LF.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain50
Current - Collector(Ic)100mA
Number1 NPN (Pre-Biased)
Pd - Power Dissipation100mW

Technical details

50V 50 100mA 1 NPN (Pre-Biased) 100mW SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)