TOSHIBA RN1111,LF(CT

TOSHIBA · Transistors (BJTs) · MPN RN1111,LF(CT

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain120
Current - Collector(Ic)100mA
Number1 NPN (Pre-Biased)
Pd - Power Dissipation100mW

Technical details

50V 120 100mA 1 NPN (Pre-Biased) 100mW SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

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