TOSHIBA · Transistors (BJTs) · MPN RN1108MFV,L3F
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 80 |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | - |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 28.6kΩ |
| Resistor Ratio | 0.468 |
| Pd - Power Dissipation | 150mW |
50V 80 100mA 150mW NPN 1 NPN (Pre-Biased) SOT-723 Single, Pre-Biased Bipolar Transistors RoHS