TOSHIBA RN1107,LF(CT

TOSHIBA · Transistors (BJTs) · MPN RN1107,LF(CT

No reviews yet — be the first to review TOSHIBA RN1107,LF(CT.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain-
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio0.213
Number-
Pd - Power Dissipation100mW
Voltage - Input(Max)(VI(off))1V
Input Voltage (VI(on)@Ic,Vce)-

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 100mW Surface Mount SOT-523

Related Transistors (BJTs)