TOSHIBA · Transistors (BJTs) · MPN RN1104,LF(CT
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 80 |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | - |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 47kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 100mW |
50V 80 100mA 100mW NPN 1 NPN (Pre-Biased) SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS