TOSHIBA · Transistors (BJTs) · MPN RN1103MFV,L3F
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| Current - Collector(Ic) | 100mA |
| Input Resistor | 28.6kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 150mW |
50V 100mA 150mW VESM Single, Pre-Biased Bipolar Transistors RoHS