TOSHIBA RN1101MFV,L3F

TOSHIBA · Transistors (BJTs) · MPN RN1101MFV,L3F

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

50V 30 100mA 1 NPN (Pre-Biased) 150mW SOT-723 Single, Pre-Biased Bipolar Transistors RoHS

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