TOSHIBA RN1101,LXHF(CT

TOSHIBA · Transistors (BJTs) · MPN RN1101,LXHF(CT

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain30
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Resistor Ratio1
Pd - Power Dissipation100mW

Technical details

50V 30 100mA 100mW NPN 1 NPN (Pre-Biased) SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

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