TOSHIBA · Transistors (BJTs) · MPN MT3S113P(TE12L,F)
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| Emitter-Base Voltage(Vebo) | 0.6V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 5.3V |
| Pd - Power Dissipation | 1.6W |
| DC Current Gain | 200 |
| Current - Collector(Ic) | 100mA |
| Transition frequency(fT) | 7.7GHz |
| type | NPN |
| Number | 1 NPN |
5.3V 1.6W 200 100mA NPN TO-243AA Bipolar RF Transistors RoHS