TOSHIBA · Transistors (BJTs) · MPN MT3S111TU,LF
No reviews yet — be the first to review TOSHIBA MT3S111TU,LF.
| Emitter-Base Voltage(Vebo) | 0.6V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 6V |
| DC Current Gain | 400 |
| Pd - Power Dissipation | 800mW |
| Current - Collector(Ic) | 100mA |
| Transition frequency(fT) | 10GHz |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM