TOSHIBA · Transistors (BJTs) · MPN HN4C06J-BL(TE85L,F
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 200 |
| Collector - Emitter Voltage VCEO | 120V |
| Pd - Power Dissipation | 300mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | - |
Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 300mW Surface Mount SC-74A(SOT-753)