TOSHIBA HN4A56JU(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN HN4A56JU(TE85L,F)

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-

Technical details

50V 120 PNP 150mA TSSOP-5(SC-70-5)SOT-353 Single Bipolar Transistors RoHS

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