TOSHIBA · Transistors (BJTs) · MPN HN4A06J(TE85L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 120V |
| Pd - Power Dissipation | 300mW |
| DC Current Gain | 700 |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 100mA |
120V 300mW 700 PNP 100mA Bipolar Transistor Arrays RoHS