TOSHIBA · Transistors (BJTs) · MPN HN1C03FU-B,LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 350 |
| Collector - Emitter Voltage VCEO | 20V |
| Pd - Power Dissipation | 200mW |
| Emitter-Base Voltage VEBO | 25V |
| Transition frequency(fT) | 30MHz |
| Vce Saturation(VCE(sat)) | 100mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 300mA |
| Operating Temperature | - |
Bipolar (BJT) Transistor NPN 20V 300mA 30MHz 200mW Surface Mount TSSOP-6(SC-88)SOT-363