TOSHIBA · Transistors (BJTs) · MPN HN1C01FYTE85LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 120 |
| Collector - Emitter Voltage VCEO | 50V |
| Pd - Power Dissipation | 300mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 80MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | - |
120 50V 300mW NPN 150mA SC-74(SOT-457) Bipolar Transistor Arrays RoHS