TOSHIBA HN1C01FE-Y,LF

TOSHIBA · Transistors (BJTs) · MPN HN1C01FE-Y,LF

No reviews yet — be the first to review TOSHIBA HN1C01FE-Y,LF.

Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation-
Emitter-Base Voltage VEBO5V
Transition frequency(fT)80MHz
Vce Saturation(VCE(sat))250mV
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

120 50V NPN 150mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)