TOSHIBA · Transistors (BJTs) · MPN HN1B04FU-Y,LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 400 |
| Collector - Emitter Voltage VCEO | 50V |
| Pd - Power Dissipation | 200mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 150MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 150mA |
Bipolar (BJT) Transistor NPN+PNP 50V 150mA 150MHz 200mW US6