TOSHIBA · Transistors (BJTs) · MPN HN1B04FE-GR,LXHF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 200 |
| Collector - Emitter Voltage VCEO | 50V |
| Pd - Power Dissipation | 100mW |
| Transition frequency(fT) | 80MHz |
| type | NPN+PNP |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | - |
200 50V 100mW NPN+PNP 150mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS