TOSHIBA · Transistors (BJTs) · MPN HN1B01FU-GR,LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 200 |
| Collector - Emitter Voltage VCEO | 50V |
| Pd - Power Dissipation | 200mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 150MHz |
| type | NPN+PNP |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | - |
200 50V 200mW NPN+PNP 150mA TSSOP-6(SC-88)SOT-363 Bipolar Transistor Arrays RoHS