TOSHIBA HN1A01FU-Y,LF

TOSHIBA · Transistors (BJTs) · MPN HN1A01FU-Y,LF

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)80MHz
Vce Saturation(VCE(sat))300mV
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 200mW Surface Mount TSSOP-6(SC-88)SOT-363

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