TOSHIBA HN1A01FE-GR,LXHF

TOSHIBA · Transistors (BJTs) · MPN HN1A01FE-GR,LXHF

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Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation-
Transition frequency(fT)80MHz
Vce Saturation(VCE(sat))300mV
typePNP
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

200 50V PNP 150mA SOT-563(SOT-666) Bipolar Transistor Arrays RoHS

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