TOSHIBA HN1A01FE-GR,LF

TOSHIBA · Transistors (BJTs) · MPN HN1A01FE-GR,LF

No reviews yet — be the first to review TOSHIBA HN1A01FE-GR,LF.

Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation-
Transition frequency(fT)80MHz
Vce Saturation(VCE(sat))300mV
typePNP
Current - Collector(Ic)150mA

Technical details

200 50V PNP 150mA Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)