TOSHIBA · Transistors (BJTs) · MPN 2SC5810(TE12L,F)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 1000 |
| Emitter-Base Voltage VEBO | 7V |
| Pd - Power Dissipation | 2W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 170mV |
Bipolar (BJT) Transistor NPN 50V 1A 2W Surface Mount SC-62