TOSHIBA 2SC5712(TE12L,F)

TOSHIBA · Transistors (BJTs) · MPN 2SC5712(TE12L,F)

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain400
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))140mV

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 1W Surface Mount SOT-89

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