TOSHIBA 2SC4117-GR(TE85L,F

TOSHIBA · Transistors (BJTs) · MPN 2SC4117-GR(TE85L,F

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain700
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 200mW Surface Mount SOT-323

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