TOSHIBA 2SC3326-B,LF

TOSHIBA · Transistors (BJTs) · MPN 2SC3326-B,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO25V
DC Current Gain350
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-
Vce Saturation(VCE(sat))42mV

Technical details

Bipolar (BJT) Transistor NPN 20V 300mA 30MHz 150mW Surface Mount SOT-23

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