TOSHIBA 2SB906-Y(TE16L1,NQ

TOSHIBA · Transistors (BJTs) · MPN 2SB906-Y(TE16L1,NQ

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)9MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain100
Pd - Power Dissipation1W
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.7V

Technical details

60V 100 PNP 3A TO-252-3 Single Bipolar Transistors RoHS

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