TOSHIBA 2SA1941-O(S1,E,S)

TOSHIBA · Transistors (BJTs) · MPN 2SA1941-O(S1,E,S)

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO5V
DC Current Gain55
Pd - Power Dissipation100W
Number1 PNP
typePNP
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor PNP 140V 10A 30MHz 100W Through Hole TO-3P-3

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