TOSHIBA 2SA1313-Y,LF

TOSHIBA · Transistors (BJTs) · MPN 2SA1313-Y,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200mW Surface Mount SC-59

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