TOSHIBA 2SA1182-Y,LF

TOSHIBA · Transistors (BJTs) · MPN 2SA1182-Y,LF

No reviews yet — be the first to review TOSHIBA 2SA1182-Y,LF.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 150mW Surface Mount TO-236-3(SOT-23-3)

Related Transistors (BJTs)