TOSHIBA · Transistors (BJTs) · MPN 2SA1163-GR,LF
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 120V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 700 |
| Pd - Power Dissipation | 200mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+125℃ |
| Vce Saturation(VCE(sat)) | 300mV |
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 200mW Surface Mount TO-236-3(SOT-23-3)