TI ULQ2003IDRG4SV

TI · Transistors (BJTs) · MPN ULQ2003IDRG4SV

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Specifications

Current - Collector Cutoff100uA
Pd - Power Dissipation950mW
Collector - Emitter Voltage VCEO50V
typeNPN
Vce Saturation(VCE(sat))1.7V
Number7 NPN
Current - Collector(Ic)500mA
Operating Temperature-40℃~+125℃

Technical details

950mW 50V NPN 500mA Bipolar Transistor Arrays RoHS

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