TI UCC37325DR

TI · Power Management ICs · MPN UCC37325DR

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Specifications

Rise Time20ns
Low Level Delay Time25ns
High Level Delay Time35ns
Fall Time15ns
FeaturesInterleaved conduction protection
Current - Output High(IOH)4A
Load TypeMOSFET
Voltage - Supply4.5V~15V
Operating Temperature0℃~+70℃
Driven ConfigurationLow Side
Current - Output Low(IOL)4A

Technical details

Low Side Gate Driver IC MOSFET SOIC-8

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